TY  - JOUR 
AU  - Sergio, García Sánchez
AU  - Rengel Estévez, Raúl
AU  - Pérez Santos, María Susana
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2023
SN  - 0018-9383
UR  - http://hdl.handle.net/10366/154550
AB  - The existence of leakage current pathways leading to the appearance of impact ionization and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a combined Monte Carlo-deep learning approach. Front-view (lateral) Monte...
LA  - eng
KW  - Gunn diodes
KW  - doped GaN
KW  - THz generation
KW  - Monte Carlo simulations
KW  - electronic transport
KW  - artificial intelligence (AI)
KW  - deep learning
TI  - A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes
DO  - 10.1109/TED.2023.3265625
T2  - IEEE Transactions on Electron Devices
VL  - 70
M2  - 2981
ER  -