TY  - JOUR 
AU  - Sergio, García Sánchez
AU  - Daher, M. Abou
AU  - Lesecq, Marie
AU  - Huo, L.
AU  - Lingaparthi, R.
AU  - Nethaji, Dharmarasu
AU  - Radhakrishnan, K.
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - García Vasallo, Beatriz
AU  - Pérez Santos, María Susana
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2023
SN  - 0018-9383
UR  - http://hdl.handle.net/10366/154552
AB  - Planar Gunn diodes based on doped GaN active layers with different geometries have been fabricated and characterized. Gunn oscillations have not been observed due to the catastrophic breakdown of the diodes for applied voltages around 20-25 V, much...
LA  - eng
KW  - Temperature measurement
KW  - Oscillators
KW  - Pulse measurements
KW  - Electric fields
KW  - Electric breakdown
KW  - Voltage measurement
TI  - On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
DO  - 10.1109/TED.2023.3271610
T2  - IEEE Transactions on Electron Devices
VL  - 70
M2  - 3447
ER  -