TY  - JOUR 
AU  - Calvo Gallego, Jaime
AU  - Delgado Notario, Juan Antonio
AU  - Velázquez Pérez, Jesús Enrique
AU  - Ferrando-Bataller, Miguel
AU  - Fobelets, Kristel
AU  - El Moussaouy, Abdelaziz
AU  - Meziani, Yahya Moubarak
PY  - 2021
SN  - 1424-8220
UR  - http://hdl.handle.net/10366/160380
AB  - This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulationdoped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30...
LA  - eng
PB  - MDPI
KW  - Terahertz
KW  - SiGe
KW  - Silicon
KW  - Strained-Si
KW  - MODFET
KW  - Electromagnetic simulation
TI  - Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs
DO  - 10.3390/s21030688
T2  - Sensors
VL  - 21
M2  - 1
ER  -