TY  - JOUR 
AU  - Delgado Notario, Juan Antonio
AU  - Clericò, Vito
AU  - Díez Fernández, Enrique
AU  - Velázquez Pérez, Jesús Enrique
AU  - Taniguchi, Takashi
AU  - Watanabe, Kenji
AU  - Otsuji, Taiichi
AU  - Meziani, Y. M.
PY  - 2020
SN  - 2378-0967
UR  - http://hdl.handle.net/10366/162235
AB  - [EN]A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz
radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes...
LA  - eng
PB  - American Institute of Physics
TI  - Asymmetric dual-grating gates graphene FET for detection of terahertz radiations
DO  - 10.1063/5.0007249
T2  - APL Photonics
VL  - 5
M2  - 066102
ER  -