TY  - JOUR 
AU  - Orfao, Beatriz
AU  - Di Gioia, G.
AU  - García Vasallo, Beatriz
AU  - Pérez Santos, María Susana
AU  - Mateos López, Javier
AU  - Roelens, Y.
AU  - Frayssinet, E.
AU  - Cordier, Y.
AU  - Zaknoune, Mohammed
AU  - González Sánchez, Tomás
PY  - 2022
SN  - 0021-8979
UR  - http://hdl.handle.net/10366/167225
AB  - [EN]A model to predict the ideal reverse leakage currents in Schottky barrier diodes, namely, thermionic emission and tunneling components,
 has been developed and tested by means of current–voltage–temperature measurements in GaN-on-SiC devices. The...
LA  - eng
PB  - AIP
KW  - GaN
KW  - Schotty Barrier Diodes
KW  - Reverse leakage current
TI  - Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
DO  - 10.1063/5.0100426
T2  - Journal of Applied Physics
VL  - 132
M2  - 044502-1
ER  -