TY  - JOUR 
AU  - Abidi, El Hadj
AU  - Clericò, Vito
AU  - Calvo Gallego, Jaime
AU  - Taniguchi, T.
AU  - Watanabe, K.
AU  - Otsuji, T.
AU  - Velázquez Pérez, Jesús Enrique
AU  - Meziani, Yahya Moubarak
PY  - 2026
SN  - 979-8-3503-7883-2
SN  - 979-8-3503-7884-9
SN  - 2162-2035
SN  - 2162-2027
UR  - http://hdl.handle.net/10366/169070
AB  - [EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal...
LA  - eng
PB  - IEEE
KW  - Boron
KW  - Graphene
KW  - Field effect transistors
KW  - Terahertz radiation
KW  - Detectors
KW  - Logic gates
KW  - Photoconductivity
KW  - Gratings
KW  - Electronics
KW  - Computing Methodologies
KW  - Signal Processing, Computer-Assisted
KW  - Terahertz Radiation
KW  - Nanotechnology
TI  - Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
DO  - 10.1109/IRMMW-THz61557.2025.11319891
T2  - 2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
VL  - 1
M2  - 1
ER  -