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Título
Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
Autor(es)
Palabras clave
GaN diodes
Terahertz
Resonant circuits
Monte Carlo method
Fecha de publicación
2014
Editor
Institute of Physics Publishing
Citación
B. G. Vasallo, J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mateos; Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits; Semiconductor Science and Technology 29, 115032 [1-9] (2014)
Resumen
A study of the high-frequency performance of GaN-based asymmetric self-switching diodes
(SSDs) designed for a room-temperature sub-THz Gunn emission, and connected to a resonant
RLC parallel circuit, is reported. With the aim of facilitating the achievement and control of
Gunn oscillations, which can potentially allow the emission of THz radiation by GaN SSDs, a
time-domain Monte Carlo (MC) theoretical study is provided. The simulator has been validated
by comparison with the I–V curves of similar fabricated structures, including the possibility of
heating effects. A V-shaped SSD has been found to be more efficient than the square one in
terms of the DC to AC conversion efficiency η. Indeed, according to our MC results, a value of η
of at least 0.35% @ 270 GHz can be achieved for the V-shaped SSD at room temperature by
using an adequate resonant circuit. This value can be increased up to 0.80%, even when
considering the heating effects, with appropriate RLC elements. Furthermore, simulations show
that when several diodes are fabricated in parallel in order to enhance the emitted power, there is
no synchronization between the oscillations of all the SSDs; however, the phase-shift effects can
be solved using a synchronized current injection by the attachment of a resonant circuit.
URI
DOI
10.1088/0268-1242/29/11/115032
Collections
- GINEAF. Artículos [88]