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Título
Operation of GaN planar nanodiodes as THz detectors and mixers
Autor(es)
Palabras clave
GaN diodes
Terahertz
Detectors
Mixers
Monte Carlo method
Fecha de publicación
2014
Editor
IEEE
Citación
I. Iñiguez-de-la-Torre, C. Daher, J.-F. Millithaler, J. Torres, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquière, T. Gonzalez and J. Mateos; Operation of GaN planar nanodiodes as THz detectors and mixers; IEEE Transactions on Terahertz Science and Technology 4, 670-677 (2014)
Resumen
In this paper, we perform, by means of Monte Carlo
simulations and experimental measurements, a geometry optimization
of GaN-based nano-diodes for broadband Terahertz
direct detection (in terms of responsivity) and mixing (in terms
of output power). The capabilities of the so-called self-switching
diode (SSD) are analyzed for different dimensions of the channel at
room temperature. Signal detection up to the 690 GHz limit of the
experimental set-up has been achieved at zero bias. The reduction
of the channel width increases the detection responsivity, while
the reduction in length reduces the responsivity but increases the
cut-off frequency. In the case of heterodyne detection an intrinsic
bandwidth of at least 100 GHz has been found. The intermediate
frequency (IF) power increases for short SSDs, while the optimization
in terms of the channel width is a trade-off between a higher
non-linearity (obtained for narrow SSDs) and a large current level
(obtained for wide SSDs). Moreover, the RF performance can be
improved by biasing, with optimum performances reached, as
expected, when the DC non-linearity is maximum.
URI
DOI
10.1109/TTHZ.2014.2356296
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