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Título
Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Autor(es)
Palabras clave
Electro-thermal simulation
Heating
GaN
Monte Carlo method
Fecha de publicación
2015
Editor
Institute of Physics Publishing
Citación
S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez; Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method; Semiconductor Science and Technology 30, 035001 [1-8] (2015)
Resumen
In this contribution we present the results from the simulation of an AlGaN/GaN heterostructure
diode by means of a Monte Carlo tool where thermal effects have been included. Two techniques
are investigated: (i) a thermal resistance method (TRM), and (ii) an advanced electro-thermal
model (ETM) including the solution of the steady-state heat diffusion equation. Initially, a
systematic study at constant temperature is performed in order to calibrate the electronic model.
Once this task is performed, the electro-thermal methods are coupled with the Monte Carlo
electronic simulations. For the TRM, several values of thermal resistances are employed, and for
the ETM method, the dependence on the thermal-conductivity, thickness and die length is
analyzed. It is found that the TRM with well-calibrated values of thermal resistances provides a
similar behavior to ETM simulations under the hypothesis of constant thermal conductivity. Our
results are validated with experimental measurements finding the best agreement when the ETM
is used with a temperature-dependent thermal conductivity.
URI
DOI
10.1088/0268-1242/30/3/035001
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