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Título
Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
Autor(es)
Palabras clave
Thernal boundary resistance
Heating
Monte-Carlo, Método de
AlGaN/GaN
Fecha de publicación
2015
Editor
Institute of Physics (Bristol, Gran Bretaña)
Citación
S García, I Íñiguez-de-la-Torre, Ó García-Pérez, J Mateos, T González and S Pérez; Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations; Journal of Physics: Conference Series 609, 012005 [1-4] (2015)
Resumen
In this paper we evaluate heat diffusion in an AlGaN/GaN diode through a Monte
Carlo simulator by expanding its capabilities with the implementation of two thermal methods.
We present the impact on the device temperature of considering different substrates and die
dimensions. We also evaluate the influence of the thermal boundary resistance (TBR) that
appears in the growth process of dissimilar materials. We analyse the effect of the TBR when
the diode is grown on two substrates, Si and SiC. As a conclusion, we can state that the TBR is
a limiting factor to the thermal flow that becomes more relevant for substrates with high
thermal conductivities.
URI
DOI
10.1088/1742-6596/609/1/012005
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- GINEAF. Artículos [85]