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Titre
Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits
Autor(es)
Sujet
Monte Carlo method
Resonant circuits
Gunn diodes
GaN
Fecha de publicación
2014
Éditeur
IEEE
Citación
B. G. Vasallo, J. F. Millithaler, I. Íñiguez-de-la-Torre, T. Gonzalez and J. Mateos; Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits; 2014 International Workshop on Computational Electronics, IWCE 2014; DOI: 10.1109/IWCE.2014.6865816
Resumen
In this work we present a theoretical study based
on time-domain Monte Carlo (MC) simulations of GaN-based
Self-Switching Diodes (SSDs) oriented to the experimental
achievement and control of the sub-THz Gunn-oscillations
potentially provided by these devices. With this aim, an analysis
of the frequency performance of SSDs connected to a resonant
RLC parallel circuit, is reported here. V-shaped SSDs have been
found to be more efficient, in terms of the DC to AC conversion
efficiency η, than similar square-shape ones. Indeed, a value of η
of at least 0.80%, can be achieved with appropriate RLC
elements, even when considering heating effects. When the
influence of parasitic elements such as the crosstalk capacitance
Ctalk is evaluated, MC simulations have shown that the resonant
circuit must contain a capacitance C higher than Ctalk in order to
obtain experimentally useful values of η. This condition can be
reached by integrating a sufficiently high number N of parallel
SSDs in the fabricated devices. MC simulations have also shown
that when several diodes are fabricated in parallel the oscillations
of all the SSDs are not synchronized, but this problem is solved
by the attachment of a resonant RLC tank.
URI
DOI
10.1109/IWCE.2014.6865816
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- GINEAF. Artículos [85]