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Titolo
Frequency-dependent shot noise in single-electron devices
Autor(es)
Soggetto
Shot noise
Single electron device
Fecha de publicación
2014
Editore
IEEE
Citación
V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González; Frequency-dependent shot noise in single-electron devices; 2014 International Workshop on Computational Electronics, IWCE 2014; DOI: 10.1109/IWCE.2014.6865843
Resumen
The simulation of a double-tunnel junction with the
SENS simulator gives access to the frequency-dependent and
static behavior of shot noise. The concept of basic paths in a
multi-state process provides a clear interpretation of the noise
regimes, and allows locating cut-offs in autocorrelation functions
and spectral densities.
URI
DOI
10.1109/IWCE.2014.6865843
Aparece en las colecciones
- GINEAF. Artículos [85]