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Titel
Temperature and surface traps influence on the THz emission from InGaAs diodes
Autor(es)
Schlagwort
THz emission
InGaAs diodes
Fecha de publicación
2015
Verlag
Institute of Physics Publishing
Citación
A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez; Temperature and surface traps influence on the THz emission from InGaAs diodes; Journal of Physics: Conference Series 647, 012039 [1-4] (2015)
Resumen
Monte Carlo simulations forecast Gunn-like oscillations at ~0.75-1.25 THz in
InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence
of this effect has been observed. The effects of temperature and surface charges on the
emission parameters from InGaAs diodes are analyzed by means of an ensemble Monte
Carlo simulator. Cooling the device down to 77 K strongly improves the amplitude of the
oscillations and can increase their frequency. On the other hand, the ratio between cap and
recess charges plays an important role for the onset of oscillations. A high level of traps in
the recess region may completely attenuate the emission.
URI
DOI
10.1088/1742-6596/647/1/012039
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- GINEAF. Artículos [88]