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Titolo
Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
Autor(es)
Soggetto
Heating
Thermal resistance
GaN diodes
Monte Carlo method
Fecha de publicación
2015
Editore
IEEE
Citación
S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez; Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations: 2015 10th Spanish Conference on Electron Devices; DOI: 10.1109/CDE.2015.7087474
Resumen
In this paper we use an electro-thermal method [solver of
the heat-flux equation coupled with an ensemble Monte Carlo (MC)
simulator] to extract the value of the thermal resistance, Rth, in diodes
consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different
substrates (polycrystalline diamond - PCD, diamond, silicon and
sapphire), and die dimensions will be analysed. When a temperatureindependent
thermal conductivity is considered, the obtained values
of Rth depend on the geometry and substrate material, and are
constant with the dissipated power (Pdiss). When a temperaturedependent
thermal conductivity is needed to correctly reproduce the
thermal behaviour of the device, Rth exhibits a strong dependence
on Pdiss.
URI
DOI
10.1109/CDE.2015.7087474
Aparece en las colecciones
- GINEAF. Artículos [88]