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Titolo
Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity
Autor(es)
Soggetto
AlGaN/GaN
Terahertz
Self-switching diode
Zero-bias detector
Fecha de publicación
2017
Editore
IEEE
Citación
H. Sánchez-Martín, S. Sánchez-Martín, O. García-Pérez, S. Pérez, J. Mateos, T. González, I. Íñiguez-de-la-Torre, and C. Gaquiere; Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity; 2017 Spanish Conference on Electron Devices, CDE 2017
Resumen
[EN]Planar nano-diodes fabricated on an AlGaN/GaN heterolayer have been measured, showing capability to detect microwave signals up to 43.5 GHz at room temperature. A single nano-diode with length L=1000 nm and width W=74 nm provides a response of approximately 55 mV DC output for a 0 dBm nominal input power at 1 GHz, with a very small fraction of the RF power reaching effectively the device due to a very large impedance mismatch. A comprehensive analytical study, which uses as input data just the measured DC current-voltage curve of the diodes, is able to replicate the values of the RF characterization and allows a deep understanding of the detection mechanism.
URI
DOI
10.1109/CDE.2017.7905251
Aparece en las colecciones
- GINEAF. Artículos [85]