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Título
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
Autor(es)
Materia
Dielectric passivation
Edge effects
Monte Carlo
Permitivity
Schottky barrier diodes
Clasificación UNESCO
2203 Electrónica
Fecha de publicación
2021
Editor
IEEE
Citación
Orfao, B. et al. (2021). Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes. IEEE Transactions on Electron Devices, 68.(9), pp. 4296-4301. doi: 10.1109/TED.2021.3097703
Resumen
[EN]The influence of passivation on the edge effects (EEs) present in the capacitance–voltage (C–V ) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers is based on the optimization of the nonlinearity of the C–V curve, where EEs, strongly influenced by the dielectric passivation of the diode, play a significant role and must be carefully considered. The
extra capacitance associated with EEs is affected by the presenceof surface charges at the semiconductor/dielectric interface,which is considered bymeans of a self-consistent model in which the local value of the surface charge is updated according to the surrounding electron density. Our results indicate that, in realistic SBD geometries, a higher dielectric constant of the passivationmaterial leads tomore pronounced EEs. The thickness of the dielectric and the lateral extension of the epilayer are also important parameters to be taken into account when dealing with EEs.
URI
ISSN
0018-9383
DOI
10.1109/TED.2021.3097703
Versión del editor
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- GINEAF. Artículos [88]