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dc.contributor.author | Orfao, Beatriz | |
dc.contributor.author | García Vasallo, Beatriz | |
dc.contributor.author | Pérez Santos, María Susana | |
dc.contributor.author | Mateos López, Javier | |
dc.contributor.author | Moro-Melgar, Diego | |
dc.contributor.author | Zaknoune, M. | |
dc.contributor.author | González Sánchez, Tomás | |
dc.date.accessioned | 2021-09-13T09:53:04Z | |
dc.date.available | 2021-09-13T09:53:04Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Orfao, B. et al. (2021). Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes. IEEE Transactions on Electron Devices, 68.(9), pp. 4296-4301. doi: 10.1109/TED.2021.3097703 | es_ES |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | http://hdl.handle.net/10366/147143 | |
dc.description.abstract | [EN]The influence of passivation on the edge effects (EEs) present in the capacitance–voltage (C–V ) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers is based on the optimization of the nonlinearity of the C–V curve, where EEs, strongly influenced by the dielectric passivation of the diode, play a significant role and must be carefully considered. The extra capacitance associated with EEs is affected by the presenceof surface charges at the semiconductor/dielectric interface,which is considered bymeans of a self-consistent model in which the local value of the surface charge is updated according to the surrounding electron density. Our results indicate that, in realistic SBD geometries, a higher dielectric constant of the passivationmaterial leads tomore pronounced EEs. The thickness of the dielectric and the lateral extension of the epilayer are also important parameters to be taken into account when dealing with EEs. | es_ES |
dc.description.sponsorship | Spanish MINECO and FEDER under Project TEC2017-83910-R and Junta de Castilla y León and FEDER under Project SA254P18 | es_ES |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | es_ES |
dc.publisher | IEEE | es_ES |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Dielectric passivation | es_ES |
dc.subject | Edge effects | es_ES |
dc.subject | Monte Carlo | es_ES |
dc.subject | Permitivity | es_ES |
dc.subject | Schottky barrier diodes | es_ES |
dc.title | Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.relation.publishversion | https://doi.org/10.1109/TED.2021.3097703 | es_ES |
dc.subject.unesco | 2203 Electrónica | es_ES |
dc.identifier.doi | 10.1109/TED.2021.3097703 | |
dc.relation.projectID | SA254P18 | es_ES |
dc.relation.projectID | TEC2017-83910-R | es_ES |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es_ES |
dc.identifier.essn | 1557-9646 | |
dc.journal.title | IEEE Transactions on Electron Devices | es_ES |
dc.volume.number | 68 | es_ES |
dc.issue.number | 9 | es_ES |
dc.page.initial | 4296 | es_ES |
dc.page.final | 4301 | es_ES |
dc.type.hasVersion | info:eu-repo/semantics/publishedVersion | es_ES |
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