TY  - JOUR 
AU  - Vasallo, Beatriz G.
AU  - Rodilla, Helena
AU  - González Sánchez, Tomás
AU  - Lefebvre, Eric
AU  - Moschetti, Giuseppe
AU  - Grahn, Jan
AU  - Mateos López, Javier
PY  - 2011
SN  - 0587-4246
UR  - http://hdl.handle.net/10366/122122
AB  - We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very...
LA  - eng
KW  - InAs HEMTs
KW  - Monte Carlo method
KW  - Impact Ionization
KW  - Kink effect
TI  - Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
ER  -