TY  - JOUR 
AU  - García Sánchez, Sergio
AU  - Íñiguez-de-la-Torre, Ignacio
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
AU  - Pérez Santos, María Susana
PY  - 2016
UR  - http://hdl.handle.net/10366/130696
AB  - In this paper, we present results from the simulations of a submicrometer AlGaN/GaN highelectron-
mobility transistor (HEMT) by using an in-house electro-thermal Monte Carlo
simulator. We study the temperature distribution and the influence of...
LA  - eng
PB  - Institute of Physics Publishing
KW  - Heating
KW  - GaN HEMTs
KW  - Thermal resistance
KW  - Thermal conductance
KW  - Substrate
TI  - Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations
DO  - 10.1088/0268-1242/31/6/065005
ER  -