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dc.contributor.authorGarcía Sánchez, Sergio
dc.contributor.authorÍñiguez-de-la-Torre, Ignacio
dc.contributor.authorPérez Santos, María Susana 
dc.contributor.authorMateos López, Javier 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.date.accessioned2013-09-03T07:15:44Z
dc.date.available2013-09-03T07:15:44Z
dc.date.issued2013
dc.identifier.citationJournal of Applied Physics 114, 074503 (2013)es_ES
dc.identifier.urihttp://hdl.handle.net/10366/122099
dc.description.abstractIn this work, we report on Monte Carlo simulations of InP and GaN vertical Gunn diodes to optimize their oscillation frequency and DC to AC conversion efficiency. We show that equivalent operating conditions are achieved by the direct application of a sinusoidal AC voltage superimposed to the DC bias and by the simulation of the intrinsic device coupled with the consistent solution of a parallel RLC resonant circuit connected in series. InP diodes with active region about 1 μm offer a conversion efficiency up to 5.5 % for frequencies around 225 GHz. By virtue of the larger saturation velocity, for a given diode length, oscillation frequencies in GaN diodes are higher than for InP structures. Current oscillations at frequencies as high as 675 GHz, with 0.1 % efficiency, are predicted at the sixth generation band in a 0.9 μm long GaN diode, corroborating the suitability of GaN to operate near the THz band. At the first generation band, structures with notch in general provide lower oscillation frequencies and efficiencies in comparison with the same structures without notch.However, a higher number of generation bands are originated in notched diodes, thus typically reaching larger frequencies. Self-heating effects reduce the performance, but in GaN diodes the efficiency is not significantly degraded.es_ES
dc.description.sponsorshipROOTHz project (FP7-243845)es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectNanodeviceses_ES
dc.subjectSSDses_ES
dc.subjectGunn Oscillationses_ES
dc.subjectMonte Carlo methodes_ES
dc.titleNumerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and lengthes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.subject.unesco22 Físicaes_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess


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Attribution-NonCommercial-NoDerivs 3.0 Unported
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Unported