Título
Plasma enhanced terahertz rectification and noise in InGaAs HEMTs
Autor(es)
Palabras clave
InGaAs HEMTs
Monte Carlo method
Plasma Oscillations
Clasificación UNESCO
Fecha de publicación
2012
Citación
J. Mateos and T. Gonzalez, "Plasma Enhanced Terahertz Rectification and Noise in InGaAs HEMTs," in IEEE Transactions on Terahertz Science and Technology, vol. 2, no. 5, pp. 562-569, Sept. 2012, doi: 10.1109/TTHZ.2012.2209970
Resumen
In this work we explore high frequency collective phenomena present in InGaAs HEMTs which lead to a peak in the current noise spectrum and enhance their DC response to THz signals, thus originating a resonance in the rectification of AC signals. These phenomena have been evidenced in recent experiments, in which THz detection as a result of plasma wave resonances has been demonstrated. In this paper, by means of Monte Carlo simulations, the noise spectra and the AC to DC rectification properties of the devices have been calculated and linked to the properties of the plasma oscillations within two distinct parts of the source-gate region: the capped and the recessed sections of the channel.
URI
DOI
10.1109/TTHZ.2012.2209970
Versión del editor
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