Plasma enhanced terahertz rectification and noise in InGaAs HEMTs

Abstract

In this work we explore high frequency collective phenomena present in InGaAs HEMTs which lead to a peak in the current noise spectrum and enhance their DC response to THz signals, thus originating a resonance in the rectification of AC signals. These phenomena have been evidenced in recent experiments, in which THz detection as a result of plasma wave resonances has been demonstrated. In this paper, by means of Monte Carlo simulations, the noise spectra and the AC to DC rectification properties of the devices have been calculated and linked to the properties of the plasma oscillations within two distinct parts of the source-gate region: the capped and the recessed sections of the channel.