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dc.contributor.author | García Sánchez, Sergio | |
dc.contributor.author | Íñiguez-de-la-Torre, Ignacio | |
dc.contributor.author | García Pérez, Óscar Alberto | |
dc.contributor.author | Mateos López, Javier | |
dc.contributor.author | González Sánchez, Tomás | |
dc.contributor.author | Sangaré, Paul | |
dc.contributor.author | Gaquiere, Christophe | |
dc.contributor.author | Pérez Santos, María Susana | |
dc.date.accessioned | 2016-09-30T08:06:26Z | |
dc.date.available | 2016-09-30T08:06:26Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez; Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method; Semiconductor Science and Technology 30, 035001 [1-8] (2015) | es_ES |
dc.identifier.uri | http://hdl.handle.net/10366/130631 | |
dc.description.abstract | In this contribution we present the results from the simulation of an AlGaN/GaN heterostructure diode by means of a Monte Carlo tool where thermal effects have been included. Two techniques are investigated: (i) a thermal resistance method (TRM), and (ii) an advanced electro-thermal model (ETM) including the solution of the steady-state heat diffusion equation. Initially, a systematic study at constant temperature is performed in order to calibrate the electronic model. Once this task is performed, the electro-thermal methods are coupled with the Monte Carlo electronic simulations. For the TRM, several values of thermal resistances are employed, and for the ETM method, the dependence on the thermal-conductivity, thickness and die length is analyzed. It is found that the TRM with well-calibrated values of thermal resistances provides a similar behavior to ETM simulations under the hypothesis of constant thermal conductivity. Our results are validated with experimental measurements finding the best agreement when the ETM is used with a temperature-dependent thermal conductivity. | es_ES |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | es_ES |
dc.publisher | Institute of Physics Publishing | es_ES |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/ | |
dc.subject | Electro-thermal simulation | es_ES |
dc.subject | Heating | es_ES |
dc.subject | GaN | es_ES |
dc.subject | Monte Carlo method | es_ES |
dc.title | Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.identifier.doi | 10.1088/0268-1242/30/3/035001 | |
dc.relation.projectID | TEC2013-41640-R | es_ES |
dc.relation.projectID | SA052U13 | es_ES |
dc.rights.accessRights | info:eu-repo/semantics/openAccess |
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