Compartir
Título
Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transitor
Autor(es)
Materia
Tunnel injection
HEMT
Schottky gate
Noise
Fecha de publicación
2014
Editor
American Institute of Physics
Citación
D. Moro-Melgar, J. Mateos, T. González and B. G. Vasallo; Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs HEMTs; Journal of Applied Physics 116, 234502 [1-7] (2014)
Resumen
By using a Monte Carlo simulator, the influence of the tunnel injection through the Schottky
contact at the gate electrode of a GaInAs/AlInAs High Electron Mobility Transistor (HEMT) has
been studied in terms of the static and noise performance. The method used to characterize the
quantum tunnel current has been the Wentzel-Kramers-Brillouin (WKB) approach. The possibility
of taking into account the influence of the image charge effect in the potential barrier height has
been included as well. Regarding the static behavior, tunnel injection leads to a decrease in the
drain current ID due to an enhancement of the potential barrier controlling the carrier transport
through the channel. However, the pinch-off is degraded due to the tunneling current. Regarding
the noise behavior, since the fluctuations in the potential barrier height caused by the tunnelinjected
electrons are strongly coupled with the drain current fluctuations, a significant increase in
the drain-current noise takes place, even when the tunnel effect is hardly noticeable in the static I-V
characteristics, fact that must be taken into account when designing scaled HEMT for low-noise
applications. In addition, tunnel injection leads to the appearance of full shot noise in the gate current.
URI
DOI
http://dx.doi.org/10.1063/1.4903971
Colecciones
- GINEAF. Artículos [88]