Frequency-dependent shot noise in single-electron devices

Título

dc.contributor.author	Talbo, Vincent
dc.contributor.author	Mateos López, Javier
dc.contributor.author	Retailleau, Sylvie
dc.contributor.author	Dollfus, Philippe
dc.contributor.author	González Sánchez, Tomás
dc.date.accessioned	2016-09-30T08:18:45Z
dc.date.available	2016-09-30T08:18:45Z
dc.date.issued	2014
dc.identifier.citation	V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González; Frequency-dependent shot noise in single-electron devices; 2014 International Workshop on Computational Electronics, IWCE 2014; DOI: 10.1109/IWCE.2014.6865843	es_ES
dc.identifier.uri	http://hdl.handle.net/10366/130635
dc.description.abstract	The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-dependent and static behavior of shot noise. The concept of basic paths in a multi-state process provides a clear interpretation of the noise regimes, and allows locating cut-offs in autocorrelation functions and spectral densities.	es_ES
dc.format.mimetype	application/pdf
dc.language.iso	eng	es_ES
dc.publisher	IEEE	es_ES
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.uri	https://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject	Shot noise	es_ES
dc.subject	Single electron device	es_ES
dc.title	Frequency-dependent shot noise in single-electron devices	es_ES
dc.type	info:eu-repo/semantics/article	es_ES
dc.identifier.doi	10.1109/IWCE.2014.6865843
dc.relation.projectID	TEC2013-41640-R	es_ES
dc.relation.projectID	SA052U13	es_ES
dc.rights.accessRights	info:eu-repo/semantics/openAccess