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Título
Time-dependent shot noise in multi-level quantum dot-based single-electron devices
Autor(es)
Palabras clave
Shot noise
Single electron device
Monte Carlo method
Double-tunnel junction
Fecha de publicación
2015
Editor
Institute of Physics Publishing
Citación
V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González; Time-dependent shot noise in multi-level quantum dot-based single-electron devices; Semiconductor Science and Technology 30, 055002 [1-7] (2015)
Resumen
By means of three-dimensional self-consistent simulation, we investigate the time- and
frequency-dependent shot noise in multi-level quantum dot (QD)-based double-tunnel junction
by analyzing auto-correlation functions and distribution of waiting times between consecutive
tunnel events through a given barrier. We derive analytic expressions for correlation and waiting
time distributions (WTDs) in the case of a maximum of two electrons in the QD. We separate the
contributions of the different evolution paths of the number of electrons in the dot between two
consecutive current pulses, called ‘basic paths’. The close relation revealed between
probabilities, WTDs and correlation functions associated to basic paths allows a good
understanding of the specific dynamics in spectral densities. The analytic results show a perfect
agreement with those obtained from numerical Monte-Carlo simulation.
URI
DOI
10.1088/0268-1242/30/5/055002
Collections
- GINEAF. Artículos [88]