Ver ítem 

Mostrar el registro sencillo del ítem

Título
Temperature and surface traps influence on the THz emission from InGaAs diodes
dc.contributor.authorRodríguez Fernández, Alberto
dc.contributor.authorÍñiguez-de-la-Torre, Ignacio
dc.contributor.authorGarcía Pérez, Óscar Alberto
dc.contributor.authorGonzález Sánchez, Sergio
dc.contributor.authorWestlund, Andreas
dc.contributor.authorPer-Ake, Nilsson
dc.contributor.authorGrahn, Jan
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorMateos López, Javier 
dc.contributor.authorPérez Santos, María Susana 
dc.date.accessioned2016-10-04T07:58:25Z
dc.date.available2016-10-04T07:58:25Z
dc.date.issued2015
dc.identifier.citationA. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez; Temperature and surface traps influence on the THz emission from InGaAs diodes; Journal of Physics: Conference Series 647, 012039 [1-4] (2015)es_ES
dc.identifier.urihttp://hdl.handle.net/10366/130650
dc.description.abstractMonte Carlo simulations forecast Gunn-like oscillations at ~0.75-1.25 THz in InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence of this effect has been observed. The effects of temperature and surface charges on the emission parameters from InGaAs diodes are analyzed by means of an ensemble Monte Carlo simulator. Cooling the device down to 77 K strongly improves the amplitude of the oscillations and can increase their frequency. On the other hand, the ratio between cap and recess charges plays an important role for the onset of oscillations. A high level of traps in the recess region may completely attenuate the emission.es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherInstitute of Physics Publishinges_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectTHz emissiones_ES
dc.subjectInGaAs diodeses_ES
dc.titleTemperature and surface traps influence on the THz emission from InGaAs diodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1088/1742-6596/647/1/012039
dc.relation.projectIDTEC2013-41640-Res_ES
dc.relation.projectIDSA052U13es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess


Ficheros en el ítem

Thumbnail
Nombre:
JP-CS-2015c.pdf
Tamaño:
2.020Mb
Formato:
PDF
Visualizar/Abrir

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem

Attribution-NonCommercial-NoDerivs 3.0 Unported
Excepto si se señala otra cosa, la licencia del ítem se describe como Attribution-NonCommercial-NoDerivs 3.0 Unported