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dc.contributor.authorGarcía Pérez, Óscar Alberto
dc.contributor.authorÍñiguez-de-la-Torre, Ignacio
dc.contributor.authorPérez Santos, María Susana 
dc.contributor.authorMateos López, Javier 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorAlimi, Yasaman
dc.contributor.authorSong, Aimin M.
dc.date.accessioned2016-10-05T16:01:11Z
dc.date.available2016-10-05T16:01:11Z
dc.date.issued2015
dc.identifier.citationÓ. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González; Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes; 2015 International Conference on Noise and Fluctuations, ICNF 2015: DOI: 10.1109/ICNF.2015.7288553es_ES
dc.identifier.urihttp://hdl.handle.net/10366/130683
dc.description.abstractIn this work, the presence of an anomalous type of low-frequency noise associated with the initiation of the oscillatory regime in Gunn diodes has been studied and experimentally evidenced. When incipient instabilities begin to appear in the device, its intermittent nature drastically enhances the noise at frequencies well below the oscillation. For higher bias voltages, the oscillation becomes purer and the associated low-frequency noise disappears.es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectNoisees_ES
dc.subjectGunn oscillationses_ES
dc.subjectInGaAs diodeses_ES
dc.titleExperimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1109/ICNF.2015.7288553
dc.relation.projectIDTEC2013-41640-Res_ES
dc.relation.projectIDSA052U13es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess


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