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dc.contributor.author | Sánchez Martín, Héctor | |
dc.contributor.author | Sánchez Martín, Sergio | |
dc.contributor.author | García Pérez, Óscar Alberto | |
dc.contributor.author | Pérez Santos, María Susana | |
dc.contributor.author | Mateos López, Javier | |
dc.contributor.author | González Sánchez, Tomás | |
dc.contributor.author | Íñiguez-de-la-Torre, Ignacio | |
dc.contributor.author | Gaquiere, Christophe | |
dc.date.accessioned | 2017-07-26T07:48:45Z | |
dc.date.available | 2017-07-26T07:48:45Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | H. Sánchez-Martín, S. Sánchez-Martín, O. García-Pérez, S. Pérez, J. Mateos, T. González, I. Íñiguez-de-la-Torre, and C. Gaquiere; Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity; 2017 Spanish Conference on Electron Devices, CDE 2017 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10366/133423 | |
dc.description.abstract | [EN]Planar nano-diodes fabricated on an AlGaN/GaN heterolayer have been measured, showing capability to detect microwave signals up to 43.5 GHz at room temperature. A single nano-diode with length L=1000 nm and width W=74 nm provides a response of approximately 55 mV DC output for a 0 dBm nominal input power at 1 GHz, with a very small fraction of the RF power reaching effectively the device due to a very large impedance mismatch. A comprehensive analytical study, which uses as input data just the measured DC current-voltage curve of the diodes, is able to replicate the values of the RF characterization and allows a deep understanding of the detection mechanism. | es_ES |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | es_ES |
dc.publisher | IEEE | es_ES |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/ | |
dc.subject | AlGaN/GaN | es_ES |
dc.subject | Terahertz | es_ES |
dc.subject | Self-switching diode | es_ES |
dc.subject | Zero-bias detector | es_ES |
dc.title | Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.identifier.doi | 10.1109/CDE.2017.7905251 | |
dc.relation.projectID | TEC2013-41640-R | es_ES |
dc.relation.projectID | SA022U16 | es_ES |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es_ES |
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