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Titel
Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
Autor(es)
Schlagwort
InGaAs
Noise
Monte Carlo method
Fecha de publicación
2017
Verlag
IEEE
Citación
S. Karishy, C. Palermo, G. Sabatini, H. Marinchio, L. Varani, J. Mateos, and T. González Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters; 2017 International Conference on Noise and Fluctuations, ICNF 2017
Resumen
[EN]The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through experiments can be overcome by the onset of an appropriate numerical protocol. In this framework, we propose a Monte Carlo calculation
of both diffusion coefficient and noise temperature of bulk In0.53Ga0.47As and InAs within a correlation functions formalism.
URI
DOI
10.1109/ICNF.2017.7985941
Aparece en las colecciones
- GINEAF. Artículos [85]