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dc.contributor.authorGarcía Vasallo, Beatriz 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorTalbo, Vincent
dc.contributor.authorLechaux, Yoann 
dc.contributor.authorWichmann, Nicolas
dc.contributor.authorBollaert, Sylvain
dc.contributor.authorMateos López, Javier
dc.identifier.citationB. G. Vasallo, T. González, V. Talbo, Y. Lechaux, N. Wichmann, S. Bollaert, and J. Mateos (2018). Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis, Journal of Applied Physics 123, 034501 [1-5]es_ES
dc.description.abstract[EN]III-V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs (TFETs) are being explored as promising devices for low-power digital applications. To assist the development of these devices from the physical point of view, a Monte Carlo (MC) model which includes impact ionization processes and band-to-band tunneling is presented. The MC simulator reproduces the I-V characteristics of experimental ungated In0.53Ga0.47As 100 nm PIN diodes, in which tunneling emerges for lower applied voltages than impact ionization events, thus being appropriate for TFETs. When the structure is enlarged up to 200 nm, the ON-state is achieved by means of impact ionization processes; however, the necessary applied voltage is higher, with the consequent drawback for low-power applications. In InAs PIN ungated structures, the onset of both impact ionization processes and band-to-band tunneling takes place for similar applied voltages, lower than 1V; thus they are suitable for the design of low-power I-MOSFETs.es_ES
dc.publisherAmerican Institute of Physicses_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.subjectImpact ionizationes_ES
dc.subjectMonte Carlo methodes_ES
dc.titleImpact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysises_ES
dc.relation.projectIDANR- 13-JS03-000es_ES

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Attribution-NonCommercial-NoDerivs 3.0 Unported
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