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Título
Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
Autor(es)
Materia
Self-switching diode
GaN
Trapping effects
Impedance measurements
Microwave detection
Fecha de publicación
2020
Resumen
[EN]The zero-bias microwave detection capability of self-switching diodes (SSDs) based on AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured responsivity shows an anomalous enhancement at low temperature, while the detected voltage exhibits a roll-off in frequency, which can be attributed to the presence of surface and bulk traps. To gain a deep insight into this behavior, a systematic DC and AC characterization of the diodes has been carried out in the mentioned temperature range. DC results confirm the existence of traps and AC measurements allow us to identify their properties. In particular, impedance studies enable to distinguish two types of traps: at the lateral surfaces of the channel, with a
wide spread of relaxation times, and in the bulk.
URI
ISSN
0957-4484
DOI
10.1088/1361-6528/ab9d44
Versión del editor
Colecciones
- GINEAF. Artículos [85]