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dc.contributor.authorOrfao, B.
dc.contributor.authorGarcía Vasallo, Beatriz 
dc.contributor.authorPérez Santos, María Susana 
dc.contributor.authorMateos López, Javier 
dc.contributor.authorMoro-Melgar, Diego
dc.contributor.authorZaknoune, M.
dc.contributor.authorGonzález Sánchez, Tomás 
dc.date.accessioned2021-09-13T09:53:04Z
dc.date.available2021-09-13T09:53:04Z
dc.date.issued2021
dc.identifier.citationOrfao, B. et al. (2021). Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes. IEEE Transactions on Electron Devices, 68.(9), pp. 4296-4301. doi: 10.1109/TED.2021.3097703es_ES
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/10366/147143
dc.description.abstract[EN]The influence of passivation on the edge effects (EEs) present in the capacitance–voltage (C–V ) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers is based on the optimization of the nonlinearity of the C–V curve, where EEs, strongly influenced by the dielectric passivation of the diode, play a significant role and must be carefully considered. The extra capacitance associated with EEs is affected by the presenceof surface charges at the semiconductor/dielectric interface,which is considered bymeans of a self-consistent model in which the local value of the surface charge is updated according to the surrounding electron density. Our results indicate that, in realistic SBD geometries, a higher dielectric constant of the passivationmaterial leads tomore pronounced EEs. The thickness of the dielectric and the lateral extension of the epilayer are also important parameters to be taken into account when dealing with EEs.es_ES
dc.description.sponsorshipSpanish MINECO and FEDER under Project TEC2017-83910-R and Junta de Castilla y León and FEDER under Project SA254P18es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectDielectric passivationes_ES
dc.subjectEdge effectses_ES
dc.subjectMonte Carloes_ES
dc.subjectPermitivityes_ES
dc.subjectSchottky barrier diodeses_ES
dc.titleDielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publishversionhttps://doi.org/10.1109/TED.2021.3097703es_ES
dc.subject.unesco2203 Electrónicaes_ES
dc.identifier.doi10.1109/TED.2021.3097703
dc.relation.projectIDSA254P18es_ES
dc.relation.projectIDTEC2017-83910-Res_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.essn1557-9646
dc.journal.titleIEEE Transactions on Electron Deviceses_ES
dc.volume.number68es_ES
dc.issue.number9es_ES
dc.page.initial4296es_ES
dc.page.final4301es_ES
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internacional