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Titel
Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations
Autor(es)
Schlagwort
Edge effects
Monte Carlo
Schottky barrier diodes
Permitivity
Dielectric
Fringing capacitance
Clasificación UNESCO
2203 Electrónica
Fecha de publicación
2021
Verlag
IEEE
Zusammenfassung
[EN]Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as frequency multipliers. In this paper, by changing the values of several technological parameters, we analyze their influence on the edge fringing capacitance in a GaN SBD. We have found that the parameters related with the dielectric used for the passivation and the lateral extension of the epilayer significantly affect the fringing capacitance, thus increasing the value of the total capacitance above the ideal one.
URI
DOI
10.1109/CDE52135.2021.9455727
Versión del editor
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- GINEAF. Artículos [85]