GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Orfao e Vale Tabernero, Beatriz; Abou-Daher, Mahmoud; Zegaoui, Malek; Mateos López, Javier; Okada, Etienne; Lepilliet, Silvie; Ducournau, Guilaume; Zaknoune, Mohammed; Roelens, Yannick

doi:10.23919/EuMIC61603.2024.10732802

Título

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

dc.contributor.author	Orfao e Vale Tabernero, Beatriz
dc.contributor.author	Abou-Daher, Mahmoud
dc.contributor.author	Zegaoui, Malek
dc.contributor.author	Mateos López, Javier
dc.contributor.author	Okada, Etienne
dc.contributor.author	Lepilliet, Silvie
dc.contributor.author	Ducournau, Guilaume
dc.contributor.author	Zaknoune, Mohammed
dc.contributor.author	Roelens, Yannick
dc.date.accessioned	2024-10-15T11:50:40Z
dc.date.available	2024-10-15T11:50:40Z
dc.date.issued	2024-09
dc.identifier.citation	B. Orfao et al., "GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement," 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 2024, pp. 375-378, doi: 10.23919/EuMIC61603.2024.10732802.
dc.identifier.uri	http://hdl.handle.net/10366/160316
dc.description.abstract	[EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, obtaining good capacitance agreement compared with that extracted from capacitance-voltage (C-V) measurements carried out in large-area diodes where the parasitic effects are not significant.	es_ES
dc.description.sponsorship	This work is supported by CPER Wavetech, and University of Lille, Ultra-High Data-rate (UHD) IEMN flagship, grant PID2020-115842RB-I00 funded by MCIN/ AEI/10.13039/501100011033, and grant SA136P23 by the Junta de Castilla y León and FEDER. The nano-fabrication is supported by the French network RENATECH, and the Equipex+ Nanofutur program, under the project IA-21-ESRE- 0012 operated by the ANR.	es_ES
dc.format.mimetype	application/pdf
dc.language.iso	eng	es_ES
dc.publisher	IEEE
dc.rights	Attribution-NonCommercial-NoDerivatives 4.0 Internacional	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/	*
dc.subject	Schottky barrier diode	es_ES
dc.subject	Equivalent circuit	es_ES
dc.subject	S parameters	es_ES
dc.subject	GaN	es_ES
dc.title	GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement	es_ES
dc.type	info:eu-repo/semantics/article	es_ES
dc.relation.publishversion	https://doi.org/10.23919/EuMIC61603.2024.10732802
dc.subject.unesco	3307.92 Microelectrónica. Tecnologías III-V y Alternativas	es_ES
dc.subject.unesco	3307 Tecnología Electrónica	es_ES
dc.identifier.doi	10.23919/EuMIC61603.2024.10732802
dc.relation.projectID	SA136P23	es_ES
dc.relation.projectID	PID2020-115842RB-I00	es_ES
dc.rights.accessRights	info:eu-repo/semantics/openAccess	es_ES
dc.journal.title	Proceedings of the 19th European Microwave Integrated Circuits Conference	es_ES
dc.page.initial	375	es_ES
dc.page.final	378	es_ES
dc.type.hasVersion	info:eu-repo/semantics/publishedVersion	es_ES