GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Orfao e Vale Tabernero, Beatriz; Abou-Daher, Mahmoud; Zegaoui, Malek; Mateos López, Javier; Okada, Etienne; Lepilliet, Silvie; Ducournau, Guilaume; Zaknoune, Mohammed; Roelens, Yannick

doi:10.23919/EuMIC61603.2024.10732802

Título

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Autor(es)

Orfao e Vale Tabernero, Beatriz

Palabras clave

Schottky barrier diode

Equivalent circuit

S parameters

GaN

Clasificación UNESCO

3307.92 Microelectrónica. Tecnologías III-V y Alternativas

3307 Tecnología Electrónica

Fecha de publicación

2024-09

Editor

IEEE

Citación

B. Orfao et al., "GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement," 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 2024, pp. 375-378, doi: 10.23919/EuMIC61603.2024.10732802.

Resumen

[EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, obtaining good capacitance agreement compared with that extracted from capacitance-voltage (C-V) measurements carried out in large-area diodes where the parasitic effects are not significant.

URI

https://hdl.handle.net/10366/160316

DOI

10.23919/EuMIC61603.2024.10732802

Versión del editor

https://doi.org/10.23919/EuMIC61603.2024.10732802

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