Título
Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs
Autor(es)
Palabras clave
Electromagnetic simulation
Scientific computing
Terahertz (THz)
THz Radiation
Sub-THz Radiation Coupling
n-channel strained-silicon MODFETs
Clasificación UNESCO
1203 Ciencia de los ordenadores
3325 Tecnología de las Telecomunicaciones
3307 Tecnología Electrónica
3304 Tecnología de Los Ordenadores
Fecha de publicación
2021-08-29
Citación
. Calvo-Gallego, J. A. Delgado-Notario, M. Ferrando-Bataller, K. Fobelets, Y. M. Meziani and J. E. Velázquez-Pérez, "Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs," 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Chengdu, China, 2021, pp. 1-2, doi: 10.1109/IRMMW-THz50926.2021.9566877.
Resumen
[EN]We report on a study of the coupling of electromagnetic radiation to a strained-silicon MODFETs used as sub-THz terahertz detector. In particular, the effect of the polarization of the incoming beam as well as the role of the bonding wires on the photoresponse generated were addressed. Two tones were considered: 0.15 and 0.30THz. Results show that the device is sensitive to the beam polarization, especially when the beam polarization is perpendicular to the transistor channel under excitation at 0.15THz. We also demonstrated that the bonding wires play a preponderant role in the coupling of the incoming radiation to the channel of the FET under excitation at 0.15THz while they have a minor role at higher frequencies (0.3THz).
URI
ISSN
2162-2027
DOI
10.1109/IRMMW-THz50926.2021.9566877
Versión del editor
Aparece en las colecciones
