Título
Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
Autor(es)
Palabras clave
Doped gallium nitride(GaN)
Monte Carlo simulations
Gunn diodes
Terahertz (THz) generation
Clasificación UNESCO
Fecha de publicación
2022
Editor
IEEE
Citación
Garcia-Sanchez, S., et al. «Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes». IEEE Transactions on Electron Devices, vol. 69, n.o 2, febrero de 2022, pp. 514-20. DOI.org (Crossref), https://doi.org/10.1109/TED.2021.3134927.
Resumen
[EN]By means of Monte Carlo simulations of gallium nitride(GaN) planar Gunn diodes,the epilayer structure
on which they are fabricated is optimized in order to achieve
ultrahigh-frequency oscillations. Practical considerations,
such as the limitations of the technological fabrication
process and the mitigation of the huge self-heating effects
expected to appear in the devices, have been also contem plated for the choice of the optimal epilayer parameters.The
best results are obtained for an active layer thickness of
150 nmwith doping of 5 × 1018 cm−3, which would provide
350GHzGunnoscillationswhenusingacontactseparation
of 0.5 μm.
URI
ISSN
0018-9383
DOI
Versión del editor
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