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Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
dc.contributor.authorAbidi, El Hadj
dc.contributor.authorClericò, Vito 
dc.contributor.authorCalvo Gallego, Jaime 
dc.contributor.authorTaniguchi, T.
dc.contributor.authorWatanabe, K.
dc.contributor.authorOtsuji, T.
dc.contributor.authorVelázquez Pérez, Jesús Enrique 
dc.contributor.authorMeziani, Yahya Moubarak 
dc.date.accessioned2026-01-20T13:22:30Z
dc.date.available2026-01-20T13:22:30Z
dc.date.issued2026-01-14
dc.identifier.citationE. Abidi et al., "Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect," 2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Helsinki, Finland, 2025, pp. 1-2, doi: 10.1109/IRMMW-THz61557.2025.11319891.es_ES
dc.identifier.isbn979-8-3503-7883-2
dc.identifier.isbn979-8-3503-7884-9
dc.identifier.issn2162-2035
dc.identifier.issn2162-2027
dc.identifier.urihttp://hdl.handle.net/10366/169070
dc.description.abstract[EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal boron nitride h-BN. Enhancement of the measured photocurrent was observed at a bias of different signs between the top and the back gates. This behavior was associated with the ratchet effect that is induced by both biasing and THz radiation. This opens the way for the development of new highly efficient detectors of terahertz radiation for different applications.es_ES
dc.description.sponsorshipThis research was funded by the Spanish Agencia Estatal de Investigación under Grants Numbers PID2021-126483OB-I00 and PID2022-136869NB-C33. This work was performed in the Cooperative Research Project of the Research Institute of Electrical Communication, Tohoku University. This work was funded by the JSPS KAKENHI under grant number 21H04546, Japan.es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectBorones_ES
dc.subjectGraphenees_ES
dc.subjectField effect transistorses_ES
dc.subjectTerahertz radiationes_ES
dc.subjectDetectorses_ES
dc.subjectLogic gateses_ES
dc.subjectPhotoconductivityes_ES
dc.subjectGratingses_ES
dc.subject.meshElectronics *
dc.subject.meshComputing Methodologies *
dc.subject.meshSignal Processing, Computer-Assisted *
dc.subject.meshTerahertz Radiation *
dc.subject.meshNanotechnology *
dc.titleTerahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effectes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publishversionhttps://doi.org/10.1109/IRMMW-THz61557.2025.11319891es_ES
dc.subject.unesco1203 Ciencia de los ordenadoreses_ES
dc.subject.unesco3325 Tecnología de las Telecomunicacioneses_ES
dc.subject.unesco3307 Tecnología Electrónicaes_ES
dc.identifier.doi10.1109/IRMMW-THz61557.2025.11319891
dc.relation.projectIDPID2021-126483OB-I00es_ES
dc.relation.projectIDPID2022-136869NB-C33es_ES
dc.relation.projectID21H04546es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/embargoedAccesses_ES
dc.journal.title2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)es_ES
dc.volume.number1es_ES
dc.issue.number1es_ES
dc.page.initial1es_ES
dc.page.final2es_ES
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES
dc.subject.decsprocesamiento de señales asistido por ordenador *
dc.subject.decsradiación de terahercios *
dc.subject.decsnanotecnología *
dc.subject.decselectrónica *
dc.subject.decsmetodologías computacionales *
dc.description.projectAgencia Estatal de Investigación (AEI)es_ES
dc.description.projectJSPS KAKENHI, Japan.es_ES


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