Título
Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect
Autor(es)
Palabras clave
Boron
Graphene
Field effect transistors
Terahertz radiation
Detectors
Logic gates
Photoconductivity
Gratings
Clasificación UNESCO
1203 Ciencia de los ordenadores
3325 Tecnología de las Telecomunicaciones
3307 Tecnología Electrónica
Fecha de publicación
2026-01-14
Editor
IEEE
Citación
E. Abidi et al., "Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect," 2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Helsinki, Finland, 2025, pp. 1-2, doi: 10.1109/IRMMW-THz61557.2025.11319891.
Resumen
[EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal boron nitride h-BN. Enhancement of the measured photocurrent was observed at a bias of different signs between the top and the back gates. This behavior was associated with the ratchet effect that is induced by both biasing and THz radiation. This opens the way for the development of new highly efficient detectors of terahertz radiation for different applications.
URI
ISBN
979-8-3503-7883-2
ISSN
2162-2035
DOI
10.1109/IRMMW-THz61557.2025.11319891
Versión del editor
Aparece en las colecciones
Patrocinador
Agencia Estatal de Investigación (AEI)
