Geometry and bias dependence of trapping effects in planar GaN nanodiodes

Sánchez Martín, Héctor; García Pérez, Óscar Alberto; Íñiguez-de-la-Torre, Ignacio; Pérez Santos, María Susana; Mateos López, Javier; González Sánchez, Tomás; Gaquiere, Christophe

doi:10.1109/CDE.2017.7905246

Título

Geometry and bias dependence of trapping effects in planar GaN nanodiodes

Autor(es)

Sánchez Martín, Héctor

García Pérez, Óscar Alberto

Íñiguez-de-la-Torre, Ignacio

Pérez Santos, María Susana

Mateos López, Javier

González Sánchez, Tomás

Gaquiere, Christophe

Palabras clave

Traps

GaN nanodiodes

Pulse and transient measurements

Fecha de publicación

2017

Editor

IEEE

Citación

H. Sánchez-Martín, O. García-Pérez, I. Íñiguez-de-la- Torre, S. Pérez, J. Mateos, T. González, and C. Gaquiere; Geometry and bias dependence of trapping effects in planar GaN nanodiodes; 2017 Spanish Conference on Electron Devices, CDE 2017; DOI: 10.1109/CDE.2017.7905246

Resumen

[EN]Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I-V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while in wider rectangular and V-shape diodes bulk trapping effects prevail.

URI

https://hdl.handle.net/10366/133422

DOI

10.1109/CDE.2017.7905246

Versión del editor

https://doi.org/10.1109/CDE.2017.7905246

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