GaN-based SSD structure for THz applications

Agrawal, Manvi; Nethaji, Dharmarasu; Radhakrishnan, K.; Gaquiere, Christophe; Ducournau, Guillaume; Lesecq, Marie; Mateos López, Javier; González Sánchez, Tomás; Íñiguez de la Torre Mulas, Ignacio; Sergio, García Sánchez; Pérez Santos, María Susana

doi:10.1109/APMC46564.2019.9038338

Título

GaN-based SSD structure for THz applications

Autor(es)

González Sánchez, Tomás

Íñiguez de la Torre Mulas, Ignacio

Sergio, García Sánchez

Pérez Santos, María Susana

Palabras clave

Gunn diodes

THz

GaN

SiC

PA-MBE

Fecha de publicación

2019

Citación

M. Agrawal et al., "GaN-based SSD structure for THz applications," 2019 IEEE Asia-Pacific Microwave Conference (APMC), Singapore, 2019, pp. 213-215, doi: 10.1109/APMC46564.2019.9038338.

Resumen

[EN]Switching diode (SSD) structure on SiC, designed using Monte Carlo simulations, for the fabrication of nano-scale SSDs to reach THz emission as a result of Gunn oscillations. Crack-free epistructure with good epi-characteristics and uniformity on 2- inch SiC substrate was achieved. High carrier density of 2 ×1018 cm-3 resulted in a low contact resistance of 0.35 Ω.mm.

URI

https://hdl.handle.net/10366/144053

DOI

10.1109/APMC46564.2019.9038338

Versión del editor

https://doi.org/10.1109/APMC46564.2019.9038338

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