Please use this identifier to cite or link to this item: http://hdl.handle.net/10366/122101
Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors: Profile on PlumX
Title: Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors
Authors: Vasallo, Beatriz G.
Rodilla, Helena
González Sánchez, Tomás
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
Keywords: InAs HEMTs
Monte Carlo method
Noise
Kink effect
Issue Date: 2012
Citation: Semiconductor Science and Technology 27, 065018 [1-5] (2012)
Abstract: Kink effect can spoil the otherwise excellent low-noise performance of InAs/AlSb HEMTs. It has its origin in the pile up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile up, which provoke an important increase of the drain-current noise, even when the kink effect is hardly perceptible in the output characteristics.
URI: http://hdl.handle.net/10366/122101
Appears in Collections:DFA. Artículos del Departamento de Física Aplicada

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