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Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis: Profile on PlumX
Título : Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Autor(es) : García Vasallo, Beatriz
González Sánchez, Tomás
Talbo, Vincent
Lechaux, Yoann
Wichmann, Nicola
Bollaert, Sylvain
Mateos López, Javier
Palabras clave : Impact ionization
Monte Carlo
InGaAs
Tunneling
Fecha de publicación : 2018
Editor : American Institute of Physics
Citación : B. G. Vasallo, T. González, V. Talbo, Y. Lechaux, N. Wichmann, S. Bollaert, and J. Mateos (2018). Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis, Journal of Applied Physics 123, 034501 [1-5]
Resumen : [EN]III-V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs (TFETs) are being explored as promising devices for low-power digital applications. To assist the development of these devices from the physical point of view, a Monte Carlo (MC) model which includes impact ionization processes and band-to-band tunneling is presented. The MC simulator reproduces the I-V characteristics of experimental ungated In0.53Ga0.47As 100 nm PIN diodes, in which tunneling emerges for lower applied voltages than impact ionization events, thus being appropriate for TFETs. When the structure is enlarged up to 200 nm, the ON-state is achieved by means of impact ionization processes; however, the necessary applied voltage is higher, with the consequent drawback for low-power applications. In InAs PIN ungated structures, the onset of both impact ionization processes and band-to-band tunneling takes place for similar applied voltages, lower than 1V; thus they are suitable for the design of low-power I-MOSFETs.
URI : http://hdl.handle.net/10366/138063
Aparece en las colecciones: GINEAF. Artículos del Grupo de Investigación en Nanodispositivos Electrónicos de Alta Frecuencia

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