Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Abstract

[EN]In this paper, we report an analysis of reverse current mechanisms observed in GaN Schottky barrier diodes leading to hysteretic behavior of the I–V curves at low temperature. By means of DC measurements from 33 to 475K, we demonstrate the presence of two leakage mecha nisms when comparing the experiments with the results obtained using a unified model to predict the ideal reverse current of the diode. Poole–Frenkel emission is the dominant mechanism for temperatures above 200K, while trap-assisted tunneling prevails for lower tempera tures, where also, hysteresis cycles are revealed by means of DC dual-sweep voltage measurements. The energy of the corresponding traps has also been determined, being around 0.2 and 0.45 eV, respectively. The hysteresis phenomenon is attributed to the bias-induced occu pancy of the energy states originating the leakage-current processes, which leads to the reduction of the reverse current after a high negative voltage is applied to the diode.