GINEAF. Nanodispositivos Electrónicos de Alta Frecuencia

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GINEAF. Nanodispositivos Electrónicos de Alta Frecuencia

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GINEAF. Artículos [100]

GINEAF. Tesis [5]

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Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs ﻿

Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs ﻿

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight ﻿

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact ﻿

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements ﻿

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes ﻿

Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions ﻿

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples ﻿

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes ﻿

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature ﻿

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement ﻿

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band ﻿

Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature ﻿

Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects ﻿

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations ﻿

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range. ﻿

2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations ﻿

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes ﻿

A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes ﻿

Estudio de la influencia de las trampas en el comportamiento DC y AC de nanodiodos de GaN a temperaturas criogénicas y su aplicación como detectores de microondas ﻿

Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs

Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range.

2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

Estudio de la influencia de las trampas en el comportamiento DC y AC de nanodiodos de GaN a temperaturas criogénicas y su aplicación como detectores de microondas