GINEAF. Artículos

Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs

García Sánchez, Sergio; Íñiguez-de-la-Torre, Ignacio; Paz-Martínez, Gaudencio; Artillan, Philippe; González Sánchez, Tomás

; Mateos López, Javier

(2026-02-24)

Artículo

Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs

Orfao, Beatriz; Peña, R. A.; García Vasallo, Beatriz

; Pérez Santos, María Susana

; Mateos López, Javier

; González Sánchez, Tomás

(2025)

Artículo

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

Sergio, García Sánchez

; Íñiguez de la Torre Mulas, Ignacio

; Mateos López, Javier

; González Sánchez, Tomás

(2025-09-07)

Artículo

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

García-Sánchez, S; Pérez, S; Íñiguez de la Torre Mulas, Ignacio

; García Vasallo, Beatriz

; Huo, L; Lingaparthi, R; Nethaji, D; Radhakrishnan, K; Abou Daher, M; Lesecq, M; González Sánchez, Tomás

; Mateos López, Javier

(2024)

Artículo

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

Sánchez Martín, Héctor

; Cótimos Nunes, Luís; Íñiguez de la Torre Mulas, Ignacio

; Pérez Martín, Elsa

; Pérez Santos, María Susana

; Mateos López, Javier

; González Sánchez, Tomás

; Carlos Pedro, José (2024)

Artículo

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Orfao, Beatriz; Abou-Daher, Mahmoud; Peña, R. A.; García Vasallo, Beatriz

; Pérez Santos, María Susana

; Íñiguez de la Torre Mulas, Ignacio

; Paz-Martínez, G.; Mateos López, Javier

; Roelens, Yannick; Zaknoune, Mohammed; González Sánchez, Tomás

(2024)

Artículo

Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

González Sánchez, Tomás

; Orfao, Beatriz; Pérez Santos, María Susana

; Mateos López, Javier

; García Vasallo, Beatriz

(2023)

Artículo

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Orfao, Beatriz; Di Gioia, G.; García Vasallo, Beatriz

; Pérez Santos, María Susana

; Mateos López, Javier

; Roelens, Y.; Frayssinet, E.; Cordier, Y.; Zaknoune, Mohammed; González Sánchez, Tomás

(2022)

Artículo

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

Garcia Sanchez, S.; Íñiguez de la Torre Mulas, Ignacio

; Pérez Santos, María Susana

; González Sánchez, Tomás

; Mateos López, Javier

(2022)

Artículo

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

Sergio, García Sánchez

; González Sánchez, Tomás

; Mateos López, Javier

(2025)

Artículo

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Orfao e Vale Tabernero, Beatriz; Abou-Daher, Mahmoud; Zegaoui, Malek; Mateos López, Javier

; Okada, Etienne

; Lepilliet, Silvie; Ducournau, Guilaume; Zaknoune, Mohammed; Roelens, Yannick (2024-09)

Artículo

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

Peña, R. A.; Orfao, B.; Íñiguez-de-la-Torre, I.; Paz, G.; Daher, M. A.; Roelens, Y.; Zaknoune, M.; Mateos, J.; González, T.; Vasallo, B. G.; Pérez, S. (2024)

Artículo

Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

Sergio, García Sánchez

; Íñiguez de la Torre Mulas, Ignacio

; Pérez Santos, María Susana

; González Sánchez, Tomás

(2024)

Artículo

Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects

Sergio, García Sánchez

; Íñiguez de la Torre Mulas, Ignacio

; González Sánchez, Tomás

; Mateos López, Javier

(2024)

Artículo

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

Sergio, García Sánchez

; Íñiguez de la Torre Mulas, Ignacio

; Paz-Martinez, Gaudencio; Artillan, Philippe; González Sánchez, Tomás

; Mateos López, Javier

(2024-03)

Artículo

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range.

Paz-Martinez, Gaudencio; Íñiguez de la Torre Mulas, Ignacio

; Sánchez Martín, Héctor

; González Sánchez, Tomás

; Mateos López, Javier

(2023)

Artículo

2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations

Iglesias Pérez, José Manuel

; Pascual Corral, Elena

; Sergio, García Sánchez

; Rengel Estévez, Raúl

(2023-07)

Artículo

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

Sergio, García Sánchez

; Daher, M. Abou; Lesecq, Marie; Huo, L.; Lingaparthi, R.; Nethaji, Dharmarasu; Radhakrishnan, K.; Íñiguez de la Torre Mulas, Ignacio

; García Vasallo, Beatriz

; Pérez Santos, María Susana

; González Sánchez, Tomás

; Mateos López, Javier

(2023-07-23)

Artículo

A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

Sergio, García Sánchez

; Rengel Estévez, Raúl

; Pérez Santos, María Susana

; González Sánchez, Tomás

; Mateos López, Javier

(2023)

Artículo

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Pérez Martín, Elsa

; Íñiguez de la Torre Mulas, Ignacio

; Gaquiere, Christophe; González Sánchez, Tomás

; Mateos López, Javier

(2021)

Artículo

GINEAF. Artículos

Sfoglia per

Immissioni Recenti

Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs

Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range.

2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

GINEAF. Artículos

Sfoglia per

Immissioni Recenti

Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs ﻿

Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs ﻿

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight ﻿

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact ﻿

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements ﻿

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes ﻿

Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions ﻿

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples ﻿

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes ﻿

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature ﻿

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement ﻿

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band ﻿

Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature ﻿

Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects ﻿

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations ﻿

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range. ﻿

2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations ﻿

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes ﻿

A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes ﻿

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence ﻿

Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs

Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range.

2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence